Si-based light emission from Ge-implanted SiO2 layers: Electric and optoelectronic properties
Si-based light emission from Ge-implanted SiO2 layers: Electric and optoelectronic properties
Rebohle, L.; Gebel, T.; von Borany, J.; Skorupa, W.; Helm, M.
Keywords: Light emission; Si-technology; Ion implantation
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Poster
10th Intern. Conference on Modulated Semiconductor Structures, Linz, July 23-27, 2001
Permalink: https://www.hzdr.de/publications/Publ-4636
Publ.-Id: 4636