Si-based light emission from Ge-implanted SiO2 layers: Electric and optoelectronic properties


Si-based light emission from Ge-implanted SiO2 layers: Electric and optoelectronic properties

Rebohle, L.; Gebel, T.; von Borany, J.; Skorupa, W.; Helm, M.

Keywords: Light emission; Si-technology; Ion implantation

  • Poster
    10th Intern. Conference on Modulated Semiconductor Structures, Linz, July 23-27, 2001

Permalink: https://www.hzdr.de/publications/Publ-4636
Publ.-Id: 4636