SiCOI Structures. Technology and Characterization


SiCOI Structures. Technology and Characterization

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J. R.; Esteve, J.; Acero, M. C.; Kögler, R.; Skorupa, W.

An alternative approach for the fabrication of SiCOI material based on ion beam synthesis technique IBS is presented. Combining IBS with wafer bonding, high crystalline quality ß-SiC layers with low residual strain, have been successfully transferred onto oxidized Si wafers, obtaining SiCOI structure with abrupt SiC/SiO2 interfaces and low surface roughness.

Keywords: ion implantation; ion beam synthesis; SiC; wafer bonding

  • Contribution to external collection
    F. Balestra et al. (eds.) Progress in SOI Structures and and Devices Operating at Extreme Conditions, 17-29 2002 Kluwer Academic Publishers. Printed in the Netherlands

Permalink: https://www.hzdr.de/publications/Publ-4958
Publ.-Id: 4958