Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation


Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation

Maser, K.; Mohr, U.; Leihkauf, R.; Ecker, K.; Beck, U.; Grambole, D.; Groetzschel, R.; Herrmann, F.; Krauser, J.; Weidinger, A.

Three effects have been observed in wet-thermally grown SiO2/Si structures under bombardement with energetic N-15 ions:

(1) Out-diffusion of H from the SiO2/Si system through the surface,
(2) Accumulation of H at the SiO2/Si interface,
(3) Changes in the optical fingerprint spectra of Psi and Delta in dependence on lambda (wavelength) obtained by ellipsometric measurements.

  • Microelectronic Engineering 48 (1-4): 139-142 SEP 1999

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Publ.-Id: 5016