Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation
Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation
Maser, K.; Mohr, U.; Leihkauf, R.; Ecker, K.; Beck, U.; Grambole, D.; Groetzschel, R.; Herrmann, F.; Krauser, J.; Weidinger, A.
Three effects have been observed in wet-thermally grown SiO2/Si structures under bombardement with energetic N-15 ions:
(1) Out-diffusion of H from the SiO2/Si system through the surface,
(2) Accumulation of H at the SiO2/Si interface,
(3) Changes in the optical fingerprint spectra of Psi and Delta in dependence on lambda (wavelength) obtained by ellipsometric measurements.
- Microelectronic Engineering 48 (1-4): 139-142 SEP 1999
Permalink: https://www.hzdr.de/publications/Publ-5016
Publ.-Id: 5016