Trapping behavior of thin siliconoxynitride layers prepared by rapid thermal processing


Trapping behavior of thin siliconoxynitride layers prepared by rapid thermal processing

Beyer, R.; Burghardt, H.; Reich, R.; Thomas, E.; Grambole, D.; Herrmann, F.; Scholz, T.; Albrecht, J.; Zahn, D. R. T.; Gessner, T.

Siliconoxynitride layers with thicknesses between 5 and 10 nm were grown on (100) oriented silicon by rapid thermal processing (RTP) using either N20 or NH3 as nitridant. In order to study the trapping behaviour at the interface and in die insulator bulk, capacitance-voltage (CV) and current-voltage (IV) measurements have been performed combined with different magnitudes of Fowler-Nordheim stress. In addition, Deep Level Transient Spectroscopy (DLTS) has been applied for interface state detection. Auger Electron Spectroscopy (AES) has been used to obtain depth profiles for Si, N, 0 and C. The deconvolution of die AES signal displays significant peak contributions related to intermedium oxidation states. Nuclear Reaction Analysis (NRA) was successfully applied for hydrogen detection in buried SiOXNY thin films.

  • Materials Research Society Symposium Proceedings 428(1996), 421-426

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Publ.-Id: 5019