Channeling doping profiles studies for small incident angle implantation into silicon wafers


Channeling doping profiles studies for small incident angle implantation into silicon wafers

Guo, B. N.; Variam, N.; Jeong, U.; Mehta, S.; Posselt, M.; Lebedev, A.

Traditional dechanneling dopant profiles in the silicon crystal wafers have been achieved by tilting the wafer away the incident beam. As feature sizes of device shrink, the advantages for channeled doping profiles for implants with small
or near zero degree incident angles are being recognized. For example, high-energy CMOS well spacing limitations caused by shadowing and encroachment of the ion beam by photoresist mask can be avoided for near zero degree incident implants. Accurate models of channeled profiles are essential to predict the device performance more important. This paper will discuss the factors important for channeled dopant profiles, such as the acceptance angle, dopant species, energy, incident angle, dose and damage accumulation in the crystal based on SIMS and Crystal-TRIM simulation results. In addition, the control requirements on ion implantation parameters from a channeling perspective will also be discussed.

Keywords: ion implantation; channeling

  • Lecture (Conference)
    17th Int. Conf. on the Application of Accelerators in Research and Industry (CAARI 2002), Denton, USA, November 12-16, 2002
  • Contribution to proceedings
    AIP Conference Proceedings 680(2003) 658

Permalink: https://www.hzdr.de/publications/Publ-5177
Publ.-Id: 5177