Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects


Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects

Ueda, M.; Beloto, A. F.; Reuther, H.; Parascandola, S.

Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2,
Si3N4 and stressed layers under thermal and sputtering effects

  • Surface and Coatings Technology 136 (2001) 244-248

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Publ.-Id: 5265