Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects
Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects
Ueda, M.; Beloto, A. F.; Reuther, H.; Parascandola, S.
Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2,
Si3N4 and stressed layers under thermal and sputtering effects
- Surface and Coatings Technology 136 (2001) 244-248
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Publ.-Id: 5265