Growth mode and texture development in TiN films during magnetron sputtering an in situ synchrotron radiation study
Growth mode and texture development in TiN films during magnetron sputtering an in situ synchrotron radiation study
Schell, N.; Bottiger, J.; Matz, W.; Chevallier, J.
For the materials research experimental station of the Rossendorf beamline ROBL at the European Synchrotron Radiation Facility in Grenoble, France, a two magnetron sputter deposition chamber for in situ study of film growth by synchrotron X-ray diffraction and reflectivity was developed. It allows high-quality depositions of compound films and multilayers. Heteroepitaxial layer-by-layer growth of TiN on single crystal MgO(0 0 1) was observed by real-time specular X-ray reflectivity showing characteristic oscillations. The pseudomorphic growth was confirmed by high-resolution TEM micrographs. During growth on amorphous SiO2 on Si(0 0 1) substrates, the microstructural development of TiN films was studied in situ as a function of film thickness. With the deposition parameters chosen, a crossover was observed: grains with a (0 0 2) plane parallel to the film surface dominate at small thicknesses, while, at larger thicknesses, (1 1 1) grains dominate. Recrystallisation was identified as a mechanism that controls this texture development.
Keywords: Thin films; Magnetron sputtering; In situ X-ray scattering; TiN
- Nucl. Instr. & Meth. B 199 (2003) 133-138
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