On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
Persson, P. O. A.; Hultman, L.; Janson, M. S.; Hallén, A.; Yakimova, R.; Panknin, D.; Skorupa, W.
no abstract
- Journal of Applied Physics 92 (2002) 2501
Permalink: https://www.hzdr.de/publications/Publ-5407
