Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies


Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies

Peeva, A.; Kögler, R.; Skorupa, W.; Kuznetsov, A.; Christensen, J.

Spatial distribution of nano-sized cavities in silicon formed by high energy Ge ion implantation and annealing was determined. The cavities were directly observed by transmission electron microscopy without any decoration. The cavities are shown to be the agglomerates of implantation-induced excess vacancies. The concentration depth profile of the vacancies bound in the cavities agrees well with the excess vacancy profile calculated for the implantation process. Almost all the generated excess vacancies agglomerate in cavities after annealing at 900 °C for 30 s. The vacancy profile coincides with the depth profile of Cu that was intentionally introduced in the cavity region. The perfect match of vacancy and Cu distribution indicates that the cavities are the determining gettering centres for Cu atoms.

Keywords: Defects in silicon; Implantation defects; Vacancies; Cavities; Gettering

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Publ.-Id: 5693