Analysis of the biaxial strain state of Al-doped c-BN films using diffraction experiments with synchrotron radiation


Analysis of the biaxial strain state of Al-doped c-BN films using diffraction experiments with synchrotron radiation

Linss, V.; Halm, T.; Hoyer, W.; Richer, F.; Schell, N.

Thin films of cubic-boron nitride with a small amount of aluminum were produced by rf magnetron sputtering of a h-BN target and an additional Al ring-shaped electrode. Then the strain state of the biaxially stressed films was measured using synchrotron X-ray diffraction and the lattice spacing that unstressed films would have was calculated for different amounts of aluminum. This unstressed lattice spacing gets larger with increasing Al-amount. There is much evidence that the aluminum atoms are substitutionally incorporated at boron sites. This article provides an insight into the method of determining the unstressed lattice spacing using a slightly changed sin2_psi method.

Keywords: Cubic boron nitride (c-BN); Al-doping; Unstressed lattice spacing; Synchrotron radiation; sin2_psi-method

  • Vacuum 70 (1) (2003) 1-9

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Publ.-Id: 5998