Fluence dependence and thermal stability of defects in helium-implanted cubic zirconia
Fluence dependence and thermal stability of defects in helium-implanted cubic zirconia
Saude, S.; Grynszpan, R. I.; Anwand, W.; Brauer, G.; Grob, J. J.; Le Gall, Y.
Slow positron implantation spectroscopy investigations of yttria-stabilized cubic zirconia implanted with 50 keV He ions detect, at 60% of the projected range, a concentration of defects maximum, which may constitute a barrier for the diffusion of helium towards the surface. The Doppler broadening lineshape dependence on the fluence suggests a change in the nature of defects above 4 x 10**16 ions/cm**2, with an enhancement of the trapping efficiency. These defects evolve into large bubbles by Ostwald ripening after annealing at temperatures higher than 573 K, as suggested by their distribution narrowing. Above 973 K, a breaking-up of the bubbles occurs, with He release and diffusion towards the surface and eventual out-gassing.
Keywords: ion implantation; zirconia; radiation effects; positrons
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Nuclear Instruments and Methods in Physics Research B 216 2004), 156-160
DOI: 10.1016/j.nimb.2003.11.072
Cited 10 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-6016
Publ.-Id: 6016