Effect of excess vacancies in ion beam synthesis of SiC nanoclusters


Effect of excess vacancies in ion beam synthesis of SiC nanoclusters

Kögler, R.; Eichhorn, F.; Mücklich, A.; Skorupa, W.; Serre, C.; Perez-Rodriguez, A.

SiC nanoclusters are synthesized in Si by simultaneous dual implantation using two ion beams, of C and Si ions. This implantation mode is associated with extra excess vacancy generation. The effect of vacancies on SiC synthesis is investigated in this study. The amount of synthesized SiC is compared for different implantation modes, simultaneous and sequential ones. Sequential pre-deposition of vacancy defects in Si before the C implantation is performed by additional Si and He implantation. The simultaneous dual beam implantation is found to be the only method to improve SiC synthesis. The introduction of vacancies, both excess vacancies and He induced vacancies, by a sequential implantation process is disadvantageous for SiC nanocluster formation. The pre-deposition of vacancy defects is accompanied with higher crystal damage and/or the defects are annealed out during the subsequent C implantation at temperatures above 400oC. Vacancies must be created “in-situ” during C implantation to achieve enhanced output of SiC.

Keywords: Ion implantation; Simultaneous dual implantation; SiC; Si; Ion beam synthesis

  • Vacuum 78(2005)2-4, 177-180

Permalink: https://www.hzdr.de/publications/Publ-6346
Publ.-Id: 6346