Virtues and pitfalls in structural analysis of compound semiconductors by the complementary use of RBS/channeling and high resolution X-ray diffraction


Virtues and pitfalls in structural analysis of compound semiconductors by the complementary use of RBS/channeling and high resolution X-ray diffraction

Turos, A.; Gaca, J.; Wojcik, M.; Nowicki, L.; Ratajczak, R.; Groetzschel, R.; Eichhorn, F.; Schell, N.

InP single crystals implanted with 1.2 MeV As-ions and InP/InGaAsP superlattices were studied with RBS/c and high resolution X-ray diffraction (HRXRD). The principal advantage of HRXRD is the determination of interplanar spacing with an accuracy of 10(-5). One should be aware of a variety of pitfalls inherently involved with the nature of X-ray diffraction. These are primarily due to the ambiguity of X-ray rocking curves evaluation. Additional peaks appearing in X-ray rocking curves after ion implantation are usually attributed to regions with distinct lattice parameter. Calculations using damage profiles measured by RBS/c indicated that they could result from X-ray interference effects. For quaternary compounds where HRXRD can hardly detect local change of composition RBS was applied for this purpose. The great accuracy of HRXRD is also advantageous for the RBS analysis: determination of lattice spacing allows the layer density determination hence, the depth scale can be expressed in linear units and stopping power data can be adjusted accurately.

Keywords: III-V semiconductors; Heterostructures; RBS/channeling; HRXRD

  • Nuclear Instruments and Methods in Physics Research B 219-20(2004), 618-625

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Publ.-Id: 6414