Efficient light emitting diodes based on nanoscale silicon
Efficient light emitting diodes based on nanoscale silicon
Helm, M.; Sun, J.; Potfajova, J.; Winnerl, S.; Dekorsy, T.; Skorupa, W.; Schmidt, B.; Mücklich, A.
After giving an overview about various approaches for silicon based light emitters, we will present our results on Si light emitting diodes prepared by high-dose boron implantation. The electroluminescence (EL) increases with temperature, resulting in a wall-plug efficiency of 0.1% at room temperature. Extensive low-temperature EL measurements allow us to put forward a model, which is based on the interplay between free excitons/carriers and excitons localized at nanoscale boron doping spikes. Finally, we demonstrate an electrically driven resonant-cavity LED based on silicon.
Keywords: silicon; luminescence; implantation; microcavity
- Physica Status Solidi (c) 2 (2005) 2941-2946
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