Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal-oxide-semiconductor device
Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal-oxide-semiconductor device
Sun, J. M.; Skorupa, W.; Dekorsy, T.; Helm, M.; Rebohle, L.; Gebel, T.
Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd/Si metal-oxide-semiconductor structure. The SiO2:Gd active layer is prepared by thermal oxidation followed by Gd+ implantation and annealing. The electroluminescence spectra show a sharp peak at 316 nm from the 6P7/2 to 8S7/2 transition of Gd3+ions. Micrometer sized electroluminescent devices are demonstrated.
Keywords: Ultravoilet; Electroluminescence; Gd; silicon; metal-oxide-semiconductor
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Applied Physics Letters 85(2004), 3387-3389
DOI: 10.1063/1.1808488
Cited 60 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-6618
Publ.-Id: 6618