Efficient silicon light emitting diodes by boron implantation: The mechanism


Efficient silicon light emitting diodes by boron implantation: The mechanism

Sun, J. M.; Dekorsy, T.; Skorupa, W.; Mücklich, A.; Schmidt, B.; Helm, M.

Experiments and theoretical modeling are presented on the origin of efficient electroluminescence from boron implanted Si-LEDs. At low lattice temperatures two bound exciton traps created by high dose boron implantation were observed in the most efficient LEDs with external power efficiency above 0.12%. The temperature dependence of the correlation between the EL intensity from free and bound excitons is analyzed by a rate equation model. This analysis reveals that the bound excitons have a unique characteristic of a low recombination rate. The enhancement of EL from free electron-hole pairs with increasing temperature is due to the thermal activation of carriers from bound exciton traps.

Keywords: silicon pn junction; electroluminescence; bound excitons; rate equations; and temperature dependence

  • Optical Materials 27(2005)5, 1041-1045

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Publ.-Id: 6638