Efficient silicon light emitting diodes by boron implantation: The mechanism
Efficient silicon light emitting diodes by boron implantation: The mechanism
Sun, J. M.; Dekorsy, T.; Skorupa, W.; Mücklich, A.; Schmidt, B.; Helm, M.
Experiments and theoretical modeling are presented on the origin of efficient electroluminescence from boron implanted Si-LEDs. At low lattice temperatures two bound exciton traps created by high dose boron implantation were observed in the most efficient LEDs with external power efficiency above 0.12%. The temperature dependence of the correlation between the EL intensity from free and bound excitons is analyzed by a rate equation model. This analysis reveals that the bound excitons have a unique characteristic of a low recombination rate. The enhancement of EL from free electron-hole pairs with increasing temperature is due to the thermal activation of carriers from bound exciton traps.
Keywords: silicon pn junction; electroluminescence; bound excitons; rate equations; and temperature dependence
- Optical Materials 27(2005)5, 1041-1045
Permalink: https://www.hzdr.de/publications/Publ-6638
Publ.-Id: 6638