Origin of Efficient Light Emission from Si pn Diodes Prepared by Ion Implantation


Origin of Efficient Light Emission from Si pn Diodes Prepared by Ion Implantation

Dekorsy, T.; Sun, J. M.; Skorupa, W.; Mücklich, A.; Schmidt, B.; Helm, M.

Electroluminescence with power efficiencies larger than 0.1 % is observed from silicon pn diodes prepared by boron implantation. The implanted boron concentration is above the solubility limit for the post-implantation annealing temperature leading to the formation of boron clusters during annealing. The electroluminescence from electron-hole pairs exhibits an anomalous increase in the total intensity with increasing temperature. This behavior is explained by the thermal release of carriers trapped at local potential minima related to the boron clusters.

Keywords: Silicon photonics; silicon light emitters; electroluminescence

  • Contribution to proceedings
    27th International Conference on the Physics of Semiconductors, 26.-30.07.2004, Flagstaff, AZ, USA
    American Institute of Physics Conference Proceedings 772(2005), 1539-1540
  • Poster
    27th Int. Conf. on the Physics of Semiconductors, Flagstaff, AZ, USA, July 26-30, 2004, 26.-30.07.2004, Flagstaff, AZ, USA

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Publ.-Id: 7096