Efficient silicon based light emitters


Efficient silicon based light emitters

Helm, M.; Sun, J. M.; Potfajova, J.; Dekorsy, T.; Schmidt, B.; Skorupa, W.

Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs were fabricated by high-dose boron implantation, producing nanoscale modifications in the material. The electroluminescence (EL) efficiency increases with temperature, reaching 0.1% (wall plug efficiency) at room temperature for optimized conditions. Such devices were integrated into a microcavity. In the MOS devices the oxide was implanted with various rare-earth elements, resulting in strong EL in the visible (Tb) and ultraviolet (Gd). External quantum efficiencies in excess of 10% are reported.

Keywords: silicon; light emitting diode; electroluminescence; rare earth; microcavity

  • Microelectronics Journal 36(2005), 957-962
    ISSN: 0026-2692

Permalink: https://www.hzdr.de/publications/Publ-7275
Publ.-Id: 7275