Formation of Highly Mobile Di-Interstitials During Ion Implantation


Formation of Highly Mobile Di-Interstitials During Ion Implantation

Posselt, M.

Atomistic computer simulations show that the metastable defect structure formed immediately after ion bombardment of silicon does not only consist of isolated mono-vacancies and mono-interstitials but also of more complex defects. Amongst them a small percentage of very mobile di-interstitials is found. The structure and energetics of these defects as well as their migration are investigated in more detail, and the results are compared with literature data. Mobile and immobile di-interstitial configurations are found. The migration mechanism shows a pronounced dependence on the temperature. The di-interstitial diffusivity and the self-diffusion coefficient per defect are calculated. The di-interstitial migrates much faster than the mono-interstitial.
The high mobility of the di-interstitials and the fact that they can be already formed during the ion bombardment may have implications for the current understanding of many experimental results obtained in the last decade, in particular for the explanation of the implantation-induced migration of interstitial-like defects at room temperature.

Keywords: defects; computer simulation; silicon

  • Poster
    E-MRS 2005 Spring Meeting, 31.05.-03.06.2005, Strasbourg, France

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Publ.-Id: 7438