Magnetic-field induced band-structure change in CeBiPt


Magnetic-field induced band-structure change in CeBiPt

Kozlova, N.; Hagel, J.; Doerr, M.; Wosnitza, J.; Eckert, D.; Muller, K.; Schultz, L.; Opahle, I.; Elgazzar, S.; Richter, M.; Goll, G.; von Lohneysen, H.; Zwicknagl, G.; Yoshino, T.; Takabatake, T.

We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above similar to 25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.

  • Physical Review Letters 95(2005), 086403

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