X-ray investigation of low-energy ion-beam induced lateral surface nanostructures on semiconductor surfaces
X-ray investigation of low-energy ion-beam induced lateral surface nanostructures on semiconductor surfaces
Grenzer, J.; Hazra, S.; Chini, T. K.; Bischoff, L.; Pietsch, U.; Sanyal, M. K.
Low energy ion beams are widely used to alter the surface properties of semiconductors. We have used two different ways to create lateral nanostructures, either using an artificial patterning by a focused ion beam or by a tilted non-focused ion beam achieving a self-organizing ripple formation. X-ray grazing-incidence diffraction is a powerful tool to investigate such lateral nano-structures. Choosing the angle of incidence smaller or slightly larger as the critical angle of total external reflection one can probe the fine structure of an in-plane Bragg diffraction in a depth between about 5 to several 100 nm.
Keywords: ion beam implantation; ion beam errosion; x-ray diffraction
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Invited lecture (Conferences)
IUMRS ICA2004, 16.-18.11.2004, Hsinchu, Taiwan
Permalink: https://www.hzdr.de/publications/Publ-7705