Influence of Al on the growth of NiSi2 on Si(001)


Influence of Al on the growth of NiSi2 on Si(001)

Allenstein, F.; Budzinski, L.; Hirsch, D.; Mogilatenko, A.; Beddies, G.; Groetzschel, R.; Hinneberg, H.

Thin films of different atomic ratios of nickel and aluminium were deposited on Si(001)-wafers by magnetron cosputtering. The content of deposited nickel complies to layer thickness of about 20 nm, After deposition the samples were annealed between 500 and 900 degrees C in steps of 100 degree using rapid thermal annealing (RTA) in N-2 ambient. RBS, SEM, TEM, XRD, AES and sheet resistance measurements were performed to characterize the grown thin films.

  • Microelectronic Engineering 82(2005)3-4, 474-478
    ISSN: 0167-9317

Permalink: https://www.hzdr.de/publications/Publ-8045
Publ.-Id: 8045