Microstructural characterization of 3C-SiC thin films grown by flash lamp induced liquid phase epitaxy


Microstructural characterization of 3C-SiC thin films grown by flash lamp induced liquid phase epitaxy

Ferro, G.; Panknin, D.; Polychroniadis, E. K.; Monteil, Y.; Skorupa, W.; Stoemenos, J.

In the so called FLASiC process, due to the transparency of the 3C-SiC, the irradiated energy is selectively absorbed at the SiC/Si interface where the most defected part of the 3C-SiC film exists. The Si at the interface melts up to a depth depending on the energy density of the flash pulse. Thus the lower part of the SiC film is dissolved into the melted Si substrate, then during the solidification phase separation occurs and the SiC is recrystallized forming high quality 3C-SiC trapezoidal pyramids (TPs) on the backside of the non-dissolved SiC film. 1. However due to significant Si mass transport the Si-surface is seriously undulated. Also the SiC film is mainly improved from the backside, which cannot be used for further epitaxial growth. For these reasons an improved method was developed with the aim, to (i) minimize the undulations of the Si substrate, and to (ii) improve the quality of the SiC film at the front interface. This method involves the deposition of a silicon overlayer (SOL) onto the SiC, followed by an additional SiC layer on the SOL. The new method is called i-FLASiC where the “i” stands for “inverse”.

  • Materials Science Forum 483-487(2005), 295

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