Advanced thermal processing of materials in the msec range (invited)


Advanced thermal processing of materials in the msec range (invited)

Skorupa, W.; Panknin, D.; Voelskow, M.; Anwand, W.; Gebel, T.; Yankov, R. A.

The paper gives an overview of our recent work in the field of thermal processing of advanced semiconductor structures by millisecond flash lamp annealing (FLA). Topics covered include ultra-shallow junction (USJ) formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide (3C-SiC). The latter is a new development, which opens up promising 3C-SiC growth possibilities and may lead to wider application of FLA. The so-called FLASiC process (Flash LAmp Supported Deposition of SiC) is based on a new type of nanoscale liquid-phase epitaxy at the SiC/Si interface resulting in the formation of a thin, low defect density seed layer of SiC onto which thicker epitaxial SiC layers can be grown.

  • Vacuum 78(2005), 673
  • Invited lecture (Conferences)
    V -th International Conference on Ion Implantation and Other Applications of Ions and Electrons (ION 2004), 14.-17.06.2004, Kazimierz Dolny, Poland

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Publ.-Id: 8189