Rare earth ion implantation for silicon based light emission


Rare earth ion implantation for silicon based light emission

Skorupa, W.; Sun, J. M.; Prucnal, S.; Rebohle, L.; Gebel, T.; Nazarov, A. N.; Osiyuk, I. N.; Helm, M.

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Keywords: Eletroluminescence; Silicon-based light emission; Rare earth ion implantation; Biosensing

  • Solid State Phenomena 108-109(2005), 755
  • Lecture (Conference)
    11th Conf. on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), 25.-30.09.2005, Giens, France

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Publ.-Id: 8190