High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods


High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods

Meduňa, M.; Novák, J.; Falub, C. V.; Bauer, G.; Tsujino, S.; Grützmacher, D.; Müller, E.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Schell, N.

We have investigated strain compensated Si/Si0.2Ge0.8 multilayers, which were grown pseudomorphically on relaxed Si0.5Ge0.5 pseudosubstrates by molecular beam epitaxy. The stability of these highly strained Si/SiGe structures upon in situ annealing has been measured by means of x-ray reflectivity (XRR) up to 830°C. The temporal evolution of XRR reciprocal space maps was recorded, and a gradual disappearance of the multilayer structure was detected after annealing for 7 h at a temperature of 790°C. From the temporal evolution of the optical constants of the layers, deduced from the simulations and fits of the specular reflectivity, we obtained an interdiffusion coefficient D = (1.01 ± 0.03) × 10-21 m2 s-1 at 790°C.

  • Journal of Physics D: Applied Physics 38(2005), A121-A125

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Publ.-Id: 8210