Antisite pair recombination in SiC by a modified concerted exchange mechanism
Antisite pair recombination in SiC by a modified concerted exchange mechanism
Posselt, M.; Gao, F.; Weber, W. J.
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Keywords: defects; SiC; atomistic simulations
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Lecture (Conference)
44. Arbeitskreis "Punktdefekte", 23.-25.03.2006, Dresden, Germany
Permalink: https://www.hzdr.de/publications/Publ-8360
Publ.-Id: 8360