The electrical properties of heavily Al-implanted, nanocrystalline and single crystalline SiC layers


The electrical properties of heavily Al-implanted, nanocrystalline and single crystalline SiC layers

Heera, V.; Madhusoodanan, K. N.; Skorupa, W.; Dubois, C.; Romanus, H.

The electrical properties of heavily Al doped (5x1019 – 1.5x1021 cm-3) single and nanocrystalline 4H-SiC layers on semi-insulating 4H-SiC substrate, prepared by multi-energy, high-fluence Al implantation and subsequent furnace annealing, are investigated by sheet resistance and Hall effect measurements. The reliability of recent results on enhanced acceptor activation in heavily Al doped, nanocrystalline SiC on conductive substrate is evaluated by direct comparison with doped SiC layers on semi-insulating substrate.

Keywords: SiC; p-type doping; Hall effect measurement

  • Poster
    SiC Rundgespräch 2006, 17.-18.07.2006, Kloster Banz, Staffelstein, Deutschland

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Publ.-Id: 8483