Primary photoluminescence in as-neutron (electron)-irradiated n-type 6H-SiC


Primary photoluminescence in as-neutron (electron)-irradiated n-type 6H-SiC

Zhong, Z. Q.; Wu, D. X.; Gong, M.; Wang, O.; Shi, S. L.; Xu, S. J.; Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.

Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1, S2, S3 disappeared at 500 °C. However, the well-known D1 center was only detected
for annealing temperatures over 700 °C. This experimental observation not only indicated that the defects S1, S2, S3 were a set of primary defects and the D1 center was a kind of secondary defect, but also showed that the D1 center and the E1, E2 observed using deep level transient spectroscopy
might not be the same type of defects arising from the same physical origin.

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Publ.-Id: 8492