Magnetic and structural properties of Fe implanted GaN


Magnetic and structural properties of Fe implanted GaN

Talut, G.; Reuther, H.; Eichhorn, F.; Mücklich, A.; Potzger, K.; Stromberg, F.; Zhou, S.

In order to investigate the possibility to create and stabilize a DMS behavior in the (Ga,Fe)N-system, p-doped GaN was implanted with 200 keV 57Fe+ ions at 350°C, RT and -30°C with fluences Φ = 1*10^16 cm^-2 - 1.6*10^17 cm^-2. Magnetic electronic and structural properties of as implanted as well as subcequently annealed samples were investigated by AES, CEMS, TEM, SQUID and XRD techniques.

Keywords: DMS; Mößbauer; GaN; Fe; Cluster

  • Poster
    Sixth Workshop on Mössbauer Spectroscopy, 07.-11.06.2006, Seeheim, Deutschland

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Publ.-Id: 8565