Competition between damage buildup and dynamic annealing in ion implantation into Ge


Competition between damage buildup and dynamic annealing in ion implantation into Ge

Posselt, M.; Bischoff, L.; Grambole, D.; Herrmann, F.

Channeling implantation of Ga into Ge is performed at two very different ion fluxes (1011 and 1019 cm-2 s-1), at two temperatures (room temperature and 250 0C), and at five different fluences. The fluence dependence of the range profiles and of the implantation damage is strongly influenced by defect accumulation and dynamic annealing. At 250 0C a significant reduction of the ion-beam-induced defects is already observed 1 s after an ion impact, and the maximum lifetime of the defects is less than 10 s. On the other hand, at room temperature no significant annealing is found within the first 10 s after ion impact. The measured Ga depth profiles are reproduced very well by atomistic computer simulations.

Keywords: Germanium; ion implantation; defects; computer simulation

  • Applied Physics Letters 89(2006), 151918

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Publ.-Id: 8661