High dose high temperature ion implantation of Ge into 4H-SiC

High dose high temperature ion implantation of Ge into 4H-SiC

Kups, T.; Weih, P.; Voelskow, M.; Skorupa, W.; Pezoldt, J.

A box like Ge distribution was formed by ion implantation at 600 C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions.

Keywords: 4H-SiC; Ge; solid solution; ion implantation; transmission electron microscopy

  • Materials Science Forum 527(2006), 851-854
  • Lecture (Conference)
    ICSCRM 2005, 18.-23.09.2005, Pittsburgh, USA

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