Flash lamp processing in the millisecond-range for Metal-Oxide-Silicon-based light emitting diodes


Flash lamp processing in the millisecond-range for Metal-Oxide-Silicon-based light emitting diodes

Prucnal, S.; Sun, J. M.; Muecklich, A.; Skorupa, W.

The influence of different annealing processes (furnace annealing FA, rapid thermal annealing RTA and flash lamp annealing FLA) on the electroluminescence intensity, electric stability and point defect creation in SiO2 layers containing Gd atoms was investigated. The samples were annealed at different temperatures (from 800 to 10000C with the step 1000C for FA and from 10000C to 12000C with the step 500C for RTA and FLA). In the case of the peak at 316 nm which corresponds to Gd3+ the strongest EL intensity was observed from the sample annealed at 11000C after FLA. Increasing of the annealing temperature leads to a decreasing of the luminescence for each of annealing methods. The same effect was observed after increasing of the annealing time. In the case of defect formation under different annealing conditions an inverse situation was observed. Increasing of the annealing temperature and annealing time leads to an increase of the EL from oxygen deficiency centers (ODCs) An increase of the luminescence from defects at a simultaneous decrease of the luminescence from Gd at 316 nm can be explained by Gd-nanocluster creation in a-SiO2 during the annealing process.

Keywords: flash lamp annealing; silicon-based light emission; electroluminescence; ion implantation

  • Lecture (Conference)
    MRS Spring Meeting 2006, 17.-21.04.2006, San Francisco, USA

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Publ.-Id: 9342