Electrical activation of implantation-induced defects in ZnO by flash-annealing


Electrical activation of implantation-induced defects in ZnO by flash-annealing

Børseth, T. M.; Christensen, J. S.; Anwand, W.; Skorupa, W.; Svensson, B. G.; Kuznetsov, A. Y.

In this project we study diffusion and electrical activation in lithium and helium implanted ZnO single crystal wafers with high resistivity using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM), respectively. Li+ ions were implanted with an energy of 837 keV at a dose of 2x1015 cm-2, and He+ were implanted with an energy of 683 keV at a dose of 6x1015 cm-2 to ensure similar implantation depths and damage productions. The samples were then annealed using short 20 ms light flashes corresponding to temperatures of 900°C, 1200°C and 1400°C. After each annealing step the samples were characterized with SSRM/SCM and SIMS. In as-implanted samples, no changes in the initially high resistivity are observed in neither the Li- nor the He-implanted samples but after the thermal treatments a substantial decrease is observed in both sets of samples. This resistivity drop is most likely related to electrical activation of shallow implantation-induced defects or deactivation of compensating defects/impurities, as He in principle should be electrically inactive in any solid state material. No significant redistribution of the implanted ions is observed.

Keywords: zinc oxide. ion implantation; flash lamp annealing; electrical activation; SIMS; scanning spreading resistance microscopy; scanning capacitance microscopy

  • Lecture (Conference)
    15, Int. Conf. on Ion Beam Modification of Materials, 18.-22.09.2006, Catania, Italy

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Publ.-Id: 9345