Crystallization of InSb phase near the bonding interface of silicon-on-insulator structure

Tyschenko, I. E.; Cherkov, A. G.; Voelskow, M.; Popov, V. P.

Crystallization of InSb phase near the bonding interface of silicon-on-insulator structure

Tyschenko, I. E.; Cherkov, A. G.; Voelskow, M.; Popov, V. P.

Bonding interface of SOI structure may be an effective sink for impurity atoms because of higher concentration of vacancies and microvoids on the cleavage planes. The behaviour of ion-implanted Sb and In atoms near the bonding interface of SOI structures was investigated as a function of annealing temperature.

Keywords: SOI; implantation; Sb; In

Lecture (Conference)
XII Gadest Conference 2007, 14.-19.10.2007, Erice, Italy
Solid State Phenomena 131-133(2007), 137-142

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