Ion beam doping of 6H-SiC for high concentration p-type layers


Ion beam doping of 6H-SiC for high concentration p-type layers

Panknin, D.; Skorupa, W.; Wirth, H.; Voelskow, M.; Mücklich, A.; Anwand, W.; Brauer, G.; Gonzalez-Verona, O.; Perez-Rodriguez, A.; Morante, J. M.

Results of an extensive study concerning implantation, annealing and electrical activation of Al and B layers of 6H-SiC are presented. With increasing implantation temperature the implantation induced damage decreased. After annealing dislocation loops are observed in Al implanted layers whereas loops and precepitates are found in B implanted layers. For good electrical properties amorphization must be avoided. Using flash lamp annealing hole concentration is measured for Al doping whereas for B doping a limited hole concentration is observed.

Keywords: ion implantation; SiC; defects; annealing; electrical activation

  • Solid State Phenomena 69-70(1999), 391-396

Permalink: https://www.hzdr.de/publications/Publ-9368
Publ.-Id: 9368