Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples


Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples

Vines, L.; Kögler, R.; Kuznetsov, A. Y.

SIMOX (separation by implanted oxygen) process was studied using cross section scanning spreading resistance microscopy (SSRM). Firstly, open volume defects, nanocavities, have been introduced by He+ ion implantation in the region, where SiO2 precipitates were subsequently formed. Secondly, dual (simultaneous) oxygen (O+) and silicon (Si+) implantation was used to modify SiO2 reaction kinetics too. The results show that the He-induced nanocavities enhance the SiO2 formation presumably releasing excess strain associated with Si oxidation, while the use of a dual O+/Si+ beam do not influence significantly the oxidation kinetics in the initial state of the SIMOX process in our samples. Overall, SSRM was shown to be a suitable method for observation of the early stage of buried oxide formation in Si, since it measures the local resistivity, the main functional parameter of a SIMOX structure.

Keywords: Silicon on insulator; ion beam synthesis; SIMOX; simultaneous dual implantation

  • Microelectronic Engineering 84(2007), 547-550
    ISSN: 0167-9317

Permalink: https://www.hzdr.de/publications/Publ-9704
Publ.-Id: 9704