In-situ Laser Reflectometry Study of the Amorphization of Silicon Carbide by MeV Ion Implantation
In-situ Laser Reflectometry Study of the Amorphization of Silicon Carbide by MeV Ion Implantation
Henkel, T.; Heera, V.; Kögler, R.; Skorupa, W.
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Journal of Applied Physics,Vol 84, No. 6, Seite 3090-3097
DOI: 10.1063/1.368508
Cited 13 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-972
Publ.-Id: 972