Optical and microstructural properties of doubly implanted SiO2 layers using combined Ge-Si implantation


Optical and microstructural properties of doubly implanted SiO2 layers using combined Ge-Si implantation

Prucnal, S.; Cheng, X. Q.; Sun, J. M.; Kögler, R.; Zuk, J.; Skorupa, W.

The optical and microstructural properties of doubly implanted SiO2 layers fabicated combined Ge-Si implantation are investigated.

Keywords: optical properties; defects; microstucture; SiO2; implantation

  • Lecture (Conference)
    5th Int. Conf. on Ion Implantation and other Applications of Ions and Electrons (ION2004), 14.-17.06.2004, Kazimierz Dolny, Poland

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Publ.-Id: 9918