Silicium
Defect engineering(1)
Ion implantation: range profiles and channeling effects (pdf, 237kB)(2)
Ion-beam-induced defect formation in Si (pdf, 483 kB)(3)
Di-and tri-interstitials in Si (with movie) (pdf, 3934kB)(4)
URL dieses Artikels
https://www.hzdr.de/db/Cms?pOid=25014
Links im Text
(1) | https://www.hzdr.de/db/Cms?pOid=24177 |
(2) | https://www.hzdr.de/db/Cms?pOid=24202 |
(3) | https://www.hzdr.de/db/Cms?pOid=24204 |
(4) | https://www.hzdr.de/db/Cms?pOid=24206 |