Contact

Dr. Wolfgang Skorupa
Head Semiconductor Materials
w.skorupaAthzdr.de
Phone: +49 351 260 - 3612
Fax: 13612, 3411

Equipment

Deposition

Image Description
Flash lamp Anlage

Flash lamp annealing

  • several tools for
    • 100 mm
    • 200 mm
    • 300 x 200 mm
    • 100 mm In-situ
    • 100 mm Simmer-Tool
  • Annealing gases: vacuum, N2, Ar, O2
  • Pulse duration: 0.13-80 ms
  • Preheating up to 1100°C
  • Energy densities 4.5 – 135 Jcm-2
  • Temperatures up to 2000°C (depending on preheating and light absorption)

Responsible: T. Schumann

PECVD

Plasma enhanced chemical vapour deposition (PECVD)

  • Manufacturer: Oxford Instruments
  • Dust-reduced environment
  • up to 8 inch
  • High temperature electrode up to 750°C
  • Materials:
    • SiO2
    • Si3N4, SiOxNy
    • TEOS-Oxide
    • amorphous Si, polycrystalline Si
    • Ge mixed layers (on request)

Responsible: L. Rebohle

PLD facility

Pulsed Laser Deposition (PLD)

  • Manufacturer: SURFACE systems + technology GmbH & Co. KG
  • Sample size: 10x10 mm^2
  • Materials:
    • Transparent Conducting Oxides
    • Multiferroics
    • Isolator films

Responsible: I. Skorupa

ALD Tool

with FWIO: Atomic layer deposition (ALD)

  • Manufacturer: Ultratech/CambridgeNanotechALD
  • up to 4 inch
  • Deposition temperature: 80 - 350°C
  • Materials:
    • Al2O3
    • HfO2
    • SiO2
    • mixed layers (on request)

Responsible: L. Rebohle (FWIM), T. Schönherr (FWIO)

Laserausheilung: Activationline 12

Laser annealing: Activationline 12

  • Manufacturer: LIMO
  • CW laser
  • Wavelength: 808 nm
  • Max. Power: 450 W
  • up to DIN A4

Responsible: S. Zhou

Laserausheilung: COMPexPRO 201

Laser annealing: COMPexPRO 201

  • Manufacturer: Coherent
  • Pulsed laser (10 Hz)
  • Wavelength: 308 nm
  • Pulse duration:  30 ns
  • Max. energy: 500 mJ per pulse

Responsible: S. Zhou

Electrical characterisation

Image Description
Hall-Effekt-Messsystem

Hall effect measuring system HMS 9709A from LakeShore:

Measurement of electrical transport parameters (resistance, charge carrier density and mobility) as a function of temperature and the magnetic field.

  • Temperature range: 2.5 - 400 K
  • Maximum magnetic field: 9 T
  • Maximum sample size: 13 x 16 mm2
  • Current range: 1 pA - 100 mA
  • resistance range: 40 µΩ - 200 GΩ

Responsible: V. Heera

Widerstandsmessung

Resistance measurement

  • 200 mm 4 Point Probe System Aitco CMT 2000
  • 400 x 300 mm Flat Panel 4 Point Probe System Aitco CMT 3000

Responsible: T. Schumann

Optical characterisation

Image Description
Optisches Labor

Optical measurement setups

  • Photoluminescence
  • Electroluminescence
  • Transmission measurement for waveguides

Responsible: J. Bhattacharyya (FWIH), L. Rebohle


Contact

Dr. Wolfgang Skorupa
Head Semiconductor Materials
w.skorupaAthzdr.de
Phone: +49 351 260 - 3612
Fax: 13612, 3411