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1 PublicationElectron-phonon coupling in n-type Ge two-dimensional systems
Ciano, C.; Persichetti, L.; Montanari, M.; Di Gaspare, L.; Capellini, G.; Baldassarre, L.; Ortolani, M.; Pashkin, O.; Helm, M.; Winnerl, S.; Virgilio, M.; de Seta, M.
Electron-optical phonon interaction is the dominant energy-loss mechanism in low-dimensional Ge/SiGe heterostructures and represents a key parameter for the design and realization of electronic and optoelectronic devices based on this material system compatible with the mainstream Si complementary metal-oxide semiconductor technology. Here we investigate the intersubband relaxation dynamics of n-type Ge/SiGe multiquantum wells with different symmetry and design by means of single-color pump-probe spectroscopy. By comparing the experimental differential transmittance data as a function of the pump-probe delay with numerical calculations based on an energy-balance rate-equation model, we could quantify an effective value for the optical phonon deformation potential describing the electron-phonon coupling in two-dimensional Ge-based systems. We found nonradiative relaxation times longer than 20 ps even in samples having intersubband energy separations larger than the optical phonon energy, evidencing the presence of a less effective electron-phonon coupling with respect to that estimated in bulk Ge.
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- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
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- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 31751) publication
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Data for: Electron-phonon coupling in n-type Ge two-dimensional systems
ROBIS: 31771 HZDR-primary research data are used by this (Id 31751) publication
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Physical Review B 102(2020), 205302
DOI: 10.1103/PhysRevB.102.205302
Cited 7 times in Scopus
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