RBS and Channeling Analysis of Cobalt Disilicide Layers Produced by Focused Ion Beam Implantation

Cobalt disilicide layers were formed by ion beam synthesis using 35 keV Co+ focused ion beam (FIB) implantation into silicon. A strong influence of the pixel dwell time on the layer formation was found. Only for short pixel dwell-times (about 1µs) closed layers with sufficient quality for device application could be formed. To understand the dwell-time effect the as-implanted samples were examined by Rutherford backscattering (RBS) and channeling analysis. A method is presented which allows quantitative measurements of samples where the implanted areas are smaller than the diameter of the RBS beam. Evidence has been obtained that the silicon crystal damage is less for short dwell-times.