Comparison of Computer Generated and ERDA depth Profiles of Oxygen Implanted into Silicon with Plasma Immersion Ion Implantation

Plasma immersion ion implantation was used to implant
oxygen into silicon with nominal doses ranging from 2 x 1016 to 2 x 1017/cm2.
Positive Ions, O+2 and O+, with a continuous energy distribution between
0 and 40 keV were implanted. The plasma parameters and the geometrical
configuration of the implantation were chosen in order to follow closely
the assumptions of a theoretical model, which allowed to calculate the
energy distribution of the incident ions. Computer simulations were performed
to derive the resulting theoretical oxygen depth distribution. The agreement
found with the experimental depth profiles, measured by elastic recoil
detection analysis, is good. The small discrepancy observed is discussed
in terms of the shortcomings of the model used.