Rare-earth implanted Y2O3 thin films
Rare-earth implanted Y2O3 thin films
Peeva, A.; Dikovska, A. O.; Atanasov, P. A.; Jime´Nez De Castro, M.; Skorupa, W.
Thin Er, Yb codoped Y2O3 films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1 MeV Er+
ions to a fluence of 6 x 10E14 at/cm2 at room temperature was performed in order to modify the structure of the as-deposited films. The as-depositedfilms have a polycrystalline column-like structure. Ion implantation induces defects into the as-deposited films. After annealing at 900 8C for 1 h inoxygen atmosphere, the films recrystallize in roundly shaped grain-like structure with grain size of about 100 nm. The Er3+ photoluminescence response was obtained for all the films by excitation through cross-relaxation of Yb3+ ions. The IR emission spectrum, consisting of two narrow peaks at 1415 and 1514 nm, differs from the typical spectra of Er-doped materials. The VIS emission spectrum observed in as-deposited films does not appear after implantation and subsequent 900 8C annealing.
Keywords: Rare-earth, erbium, ion implantation, thin films; Y2O3; Pulsed Laser Deposition
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Applied Surface Science 253(2007), 8165-8168
DOI: 10.1016/j.apsusc.2007.02.121
Cited 18 times in Scopus
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