Junction formation in Ge by ion implantation

Ion implantation in Ge is studied at energies and doses relevant for application to advanced modern devices, such as CMOS transistors. Shallow donors like P typically have high diffusivity and low activity in view of the formation of shallow, low-resistance junctions. Similarly to the Si case, co-doping with non-dopant elements (N in this study) and advanced annealing techniques, such as FLA annealing, can provide a viable route to significantly improve the trade-off of n-type Ge junctions.
Residual implant-induced defectivity, which can be a source of enhanced diffusion and generation currents in Ge diodes, seems to remain up to temperatures (≥ 500 oC) important for activation of dopants in Ge.
However, once the thermal budget is optimized for implant damage removal, the Ge diode leakage may be dominated by surface generation currents, due to a high density of surface states, not efficiently reduced by current passivation schemes.