The origin of the Energy-Dose window in Separartion-by-Implanted-Oxygen (SIMOX) materials processing

Separation-by-Implantated-Oxygen (SIMOX) is an established technique to manufacture a buried oxide layer in silicon (SOI) by ion implantation and annealing. The so called energy-dose window defines implantation parameters suitable for the formation of a continuous buried oxide layer with the lowest ion dose. The study concerns the reason why defined combinations of ion energy and ion dose result in a high quality oxide layer. Excess defects induced by the O implantation are shown to influence the oxide layer formation. The depth distribution of excess defects fits very well with the final depth position of the oxide layer for O implants in the energy-dose window.