Spatial Distribution of Defects in Ion-Implanted and Annealed Si: the R_P/2 Effect

Spatial Distribution of Defects in Ion-Implanted and Annealed Si: the R_P/2 Effect

Kögler, R.; Yankov, R. A.; Kaschny, J. R.; Posselt, M.; Danilin, A. B.; Skorupa, W.

• Nuclear Instruments and Methods in Physics Research B 142 (1998) 493-502
  DOI: 10.1016/S0168-583X(98)00341-3
  Cited 23 times in Scopus

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