Fast Intraband Capture and Relaxation in InAs/GaAs Self-Assembled Quantum Dots
Fast Intraband Capture and Relaxation in InAs/GaAs Self-Assembled Quantum Dots
Zibik, E. A.; Menzel, S.; Aivaliotis, P.; Carpenter, B. A.; Cockburn, J. W.; Skolnick, M. S.; Wilson, L. R.; Grange, T.; Ferreira, R.; Bastard, G.; Stehr, D.; Winnerl, S.; Helm, M.; Steer, M. J.; Hopkinson, M.
Electron capture and relaxation processes in n-type InAs/GaAs quantum dots were investigated using mid-infrared degenerated pump-probe spectroscopy. Fast (~4 ps - 10 ps) intraband relaxation/capture times were measured even in the absence of electron-hole scattering.
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Lecture (Conference)
Conference on Lasers & Electro-Optics 2007, 06.-11.05.2007, Baltimore, USA -
Contribution to proceedings
Conference on Lasers & Electro-Optics 2007, 06.-11.05.2007, Baltimore, USA
CLEO/QELS & PhAST Technical Digest CD-ROM 2007
Permalink: https://www.hzdr.de/publications/Publ-11159
