High cluster formation tendency in Co implanted ZnO
High cluster formation tendency in Co implanted ZnO
Potzger, K.; Kuepper, K.; Xu, Q.; Zhou, S.; Schmidt, H.; Helm, M.; Fassbender, J.
ZnO(0001) single crystals have been implant-doped with maximum 5 atomic % of Co at low temperatures. While as-implanted crystals do not show ferromagnetic properties, post implantation annealing leads to the transformation of the implanted Co ions into small metallic clusters giving rise to a pronounced hysteresis upon magnetization reversal. The dispersed Co ions are in 2+ oxidation state. Positive magneto-resistance could be observed at low temperatures.
Keywords: zno; ion implantation; diluted magnetic semiconductors
- Journal of Applied Physics 104(2008)2, 23510
Permalink: https://www.hzdr.de/publications/Publ-11211